| Autor: |
Kyungmin KIM, Shingo GENCHI, Shiro YAMAZAKI, Hidekazu TANAKA, Masayuki ABE |
| Zdroj: |
Vacuum & Surface Science; 2023, Vol. 66 Issue 7, p411-415, 5p |
| Abstrakt: |
Vanadium dioxide (VO2) thin films exhibit a metal--insulator transition (MIT) near room temperature with sensitivity to the lattice strain. MIT property has been tuned by W-doping, fabrication of nanowires, etc. In addition to these methods, use of step and terrace structures could be a prospective candidate to control the MIT property since VO2 is sensitive to the lattice strain at the interface between thin films and substrates. In this study, VO2/TiO2 microwires were fabricated following the thin film growth to investigate the in-plane crystal orientation dependence of the MIT property. The VO2/TiO2 microwires with step and terrace structures exhibited a more significant MIT anisotropy, which is promising for strain engineering in device applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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