| Autor: |
Iakovleva, N. I., Kovshov, V. S. |
| Předmět: |
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| Zdroj: |
Journal of Communications Technology & Electronics; 2023 Suppl 2, Vol. 68, pS190-S197, 8p |
| Abstrakt: |
The temperature dependence of the dark current in InAsSb-based p–n photodiodes detecting radiation in the medium-wave infrared (MWIR) region have been calculated, taking into account material characteristics of InAs1 – xSbx alloy. The desired signal-to-noise ratio is ∼103 at T = 150 K, which confirms the possibility of achieving high photovoltaic parameters in InAs1 – xSbx photodiodes and their usage in high-temperature applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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