| Autor: |
Hibino, Yuki, Yamamoto, Tatsuya, Yakushiji, Kay, Taniguchi, Tomohiro, Kubota, Hitoshi, Yuasa, Shinji |
| Předmět: |
|
| Zdroj: |
Advanced Electronic Materials; Mar2024, Vol. 10 Issue 3, p1-9, 9p |
| Abstrakt: |
The spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for the semiconductor integration process. Thus far, none of the crystalline‐based spin Hall materials are able to satisfy these requirements. Here, a promising solution for SOT‐MRAMs is provided using amorphous W─Ta─B alloys. Even without a long‐range crystal order, W─Ta─B alloys exhibit both large effective spin Hall angles up to 40% derived from a Ta substitutional doping and superior annealing stability (up to 400 °C) due to the addition of B, enabling them to satisfy both requirements. Nanoscale three‐terminal SOT‐MRAM cells are fabricated, and these are demonstrated to have high magnetoresistance ratios (up to 130%) and extremely low intrinsic switching current densities (down to 4 × 106 A cm−2). These results show that amorphous spin Hall materials can provide the key for realizing high‐performance SOT‐MRAMs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Plný text