| Autor: |
Kim, Yongjae, Kang, Hojin, Ha, Heeju, Choi, Minsuk, Jeon, Minsung, Cho, Sung Min, Chae, Heeyeop |
| Předmět: |
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| Zdroj: |
Plasma Processes & Polymers; Mar2024, Vol. 21 Issue 3, p1-11, 11p |
| Abstrakt: |
The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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