| Autor: |
Qiu, Mengting, Lu, Yunxiang, Jia, Zhenglin, Yang, Mingyang, Hu, Xiaofei, Hao, Mingxin, Nishimura, Kazuhito, Jiang, Nan, Yuan, Qilong, Lin, Cheng-Te, Cui, Junfeng |
| Předmět: |
|
| Zdroj: |
CrystEngComm; 3/14/2024, Vol. 26 Issue 10, p1464-1471, 8p |
| Abstrakt: |
Silicon nitride (Si3N4) has great potential for applications in photoelectric and semiconductor fields. In this study, a novel strategy of fabricating Si3N4 crystals is reported, and the morphology of α-Si3N4 can be controlled. The aBN/SiO2/Si wafers were designed and irradiated by a high-energy electron beam for 2 min using home-made equipment. Tree-like α-Si3N4 dendrites and [001]-oriented unbranched α-Si3N4 whiskers can be synthesized by controlling the electron beam energy. Related formation mechanisms were analyzed based on componential and structural characterization using a scanning electron microscope and high-resolution transmission electron microscope. In addition, photoluminescence measurements indicate that the synthesized α-Si3N4 exhibit unique photoluminescence properties. This is attributed to α-Si3N4 forming abundant Si–Si bonds, Si dangling bonds, N dangling bonds and oxygen bonds in the synthesis process. These findings provide new insights into fabricating high-quality Si3N4 crystals, as well as developing related high-performance micro- or nano-devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
