| Autor: |
Zorina, M. V., Kraev, S. A., Lopatin, A. Ya., Mikhailenko, M. S., Okhapkin, A. I., Perekalov, A. A., Pestov, A. E., Chernyshev, A. K., Chkhalo, N. I., Kuznetsov, I. I. |
| Zdroj: |
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques; 2023 Suppl 1, Vol. 17, pS259-S264, 6p |
| Abstrakt: |
A technique is proposed for the formation of a developed regular structure on the surface of a polished single-crystal silicon wafer by ion-beam etching. It is shown that when single-crystal silicon is etched by a beam of accelerated Ar+ ions with normal ion incidence on the sample surface, a surface region with a developed relief is formed, which can serve as a reflection-reducing layer. The reflection of radiation with wavelengths of 532, 633, 780, and 980 nm from a sample of single-crystal silicon with the orientation of the surface cut {100}, subjected to ion-beam treatment with Ar+ ions with an energy of Eion = 400 eV for 10 hours (material removal was 7.5 µm) is studied. The specular-reflection curves of s-polarized radiation are obtained as functions of the angle of incidence. A decrease in the reflection coefficient relative to a polished silicon wafer is found at all investigated wavelengths. The largest decrease (more than 4 times) is recorded for a wavelength of 532 nm. It is shown that the range of heights of inhomogeneities formed during ion-beam etching increases linearly with an increase in the depth (time) of etching, which can be used to optimize the relief for a given wavelength. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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