Amorphous and hexagonal boron nitride growth using bromide chemistry.

Autor:	Jacquemin, M., Remigy, A., Menacer, B., Mille, V., Barraud, C., Lazzaroni, C.
Předmět:	PLASMA-enhanced chemical vapor deposition BORON nitride BROMIDES
Zdroj:	MRS Communications; Feb2024, Vol. 14 Issue 1, p63-68, 6p
Abstrakt:	A plasma-enhanced chemical vapour deposition process based on a micro-plasma working in argon/nitrogen mixture and using a bromide precursor is used to grow boron nitride. Without hydrogen (H2) in the reactive media, growth of amorphous boron nitride (a-BN) is observed, while the injection of H2 in the deposition chamber leads to the growth of hexagonal boron nitride (h-BN), H2 limiting the negative effect of bromide. The distance between the plasma source and the substrate has a strong influence on the films stoichiometry which partly explains why the h-BN layers are not stable with a fast deterioration into boric acid. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink