| Autor: |
Zaman, Muhammad Yushar, Susanto, Iwan, Belyamin, Kamal, Dianta Mustofa, Rahmiati, Tia, Rizkia, Vika, Permana, Sulaksana, Tsai, Chi-Yu, Yu, Ing-Song, Agsya, Raihan Trinanda |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2024, Vol. 3003 Issue 1, p1-6, 6p |
| Abstrakt: |
The gallium nitride (GaN) films are grown on molybdenum disulfide (MoS2) layers via plasma-assisted molecular beam epitaxy (PA-MBE). Investigating the surface structure and morphology of GaN film was performed by reflection high energy diffraction (RHEED), Scanning Electron Microscopic (SEM), and Atomic Force Mechanical (AFM). The spots patterns with high intensity were demonstrated by RHEED showing the structure of single crystal constructed in GaN films. The surface of GaN appears homogenous with a few bright spots. The surface texture formed on GaN films was the smooth surface with RMS of 1.96 nm and average roughness was 1.39 nm. The use of a 2D MoS2 layer as a template for GaN growth is beneficial because it has a similar lattice structure and thermal expansion coefficient to GaN, resulting in reduced lattice mismatches and defects at the interface. In addition, the hexagonal structure of GaN cluster was exhibited by GaN films on the surface. Based on the surface structure and morphology, GaN films was sucessfully grown on the MoS2 layers using PA-MBE system. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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