| Autor: |
G. C., Geethanjali, G., Pavithra, Manjunath, T. C. |
| Předmět: |
|
| Zdroj: |
Grenze International Journal of Engineering & Technology (GIJET); Jan Part 2, Vol. 10, p1665-1669, 5p |
| Abstrakt: |
The research article investigates the development of Vertical Gallium Arsenide (GaAs) Channel High Electron Mobility Transistor (HEMT) for Power Applications in IC Technology. This specialized transistor, the Vertical GaAs Channel HEMT, is designed with unique properties enabling its application in high-frequency and high-power operations, particularly in power-related contexts. The abstract succinctly encapsulates the ongoing progress in this development, emphasizing its primary focus on enhancing power efficiency and performance within integrated circuits (ICs). The innovation seeks to facilitate the creation of more compact and efficient electronic devices by integrating power applications seamlessly into ICs. Notably, the technology's ability to operate at higher frequencies renders it pertinent for applications in communication and radar systems. The study also explores the potential for reducing power consumption, aligning with the industry's overarching commitment to energyefficient electronics. The broader applications of Vertical GaAs Channel HEMT extend into emerging fields such as 5G communication and satellite technology, signifying substantial advancements in the realm of advanced and efficient electronic systems. The abstract concludes by recommending researchers refer to recent academic journals and industry publications for the latest updates on semiconductor advancements. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
