| Abstrakt: |
This paper investigates the effect of high-k gate dielectric materials on DC, RF and noise parameters of AlGaN/GaN MOSHEMT. Hafnium dioxide (HfO2) is used as high-k gate dielectric material to study the proposed MOSHEMT and compared with MOSHEMT having alumina (Al2O3) as gate dielectric. The Transition Frequency (fT) is 114 (105) GHz of MOSHEMT with HfO2 (Al2O3) and the Maximum Oscillation Frequency (fMAX) is 192 (177) GHz of MOSHEMT with HfO2 (Al2O3). The obtained fT and fMAX signify that the MOSHEMT with HfO2 can be operated at higher frequency which can cover Ku, K, Ka, V, W, and lower tierce of millimeter wave (mmWave). Therefore, the noise parameters such as minimum noise figure (NFMIN), noise resistance (Rn) and optimum reflection coefficient (ГOPT) have been estimated for the frequency range from 10 to 120 GHz. Maximum drain current (IDMAX), threshold voltage (Vt) and transconductance (gm) have been also estimated for the MOSHEMT with HfO2 and Al2O3 as gate dielectric layer. All the obtained results exhibit that the MOSHEMT with HfO2 could be useful for higher frequency and low noise applications. [ABSTRACT FROM AUTHOR] |
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