(Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress.

Autor: Nabatame, Toshihide, Sawada, Tomomi, Irokawa, Yoshihiro, Koide, Yasuo, Tsukagoshi, Kazuhito
Zdroj: ECS Meeting Abstracts; 2023, Vol. MA2023-02 Issue 1, p1527-1527, 1p
Databáze: Complementary Index