(Invited) Characteristics of GaN/High-k Capacitors Under Positive Bias Stress.
Autor: | Nabatame, Toshihide, Sawada, Tomomi, Irokawa, Yoshihiro, Koide, Yasuo, Tsukagoshi, Kazuhito |
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Zdroj: | ECS Meeting Abstracts; 2023, Vol. MA2023-02 Issue 1, p1527-1527, 1p |
Databáze: | Complementary Index |
Externí odkaz: |