| Autor: |
Saquib, T., Akyol, F., Ozden, H., Somaiah, N., Sahoo, J., Muralidharan, R., Nath, D. N. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/14/2024, Vol. 135 Issue 6, p1-8, 8p |
| Abstrakt: |
We report on the study of electron transport and band offset across β -Ga 2 O 3 /4H-SiC N–n isotype heterojunction. N-type β -Ga 2 O 3 of thickness 2.7 μ m was grown using low-pressure chemical vapor deposition using germanium (Ge) as the dopant on an n-type 4H-SiC substrate. The grown epilayer having (− 201) orientation was verified through XRD. Temperature-dependent I–V and C–V measurements were performed (50–300 K) to investigate the transport properties across the heterojunction. First, lateral diodes were fabricated on β -Ga 2 O 3 , and from C–V, n-doping was estimated to be 2.3 × 10 17 cm − 3 in the epilayer while the Schottky barrier height was estimated to be 1.75 eV. In top-down I–V sweeps, the reverse current across the heterojunction exhibited marginal dependence on temperature, indicating a possible tunnelling-based transport mechanism, while the forward current exhibited an exponential dependence on both temperature and the applied bias. The band diagram indicated the formation of a two-dimensional electron gas (2DEG) at the hetero-interface, which was indirectly confirmed using C–V measurement and TCAD simulation at low temperatures. From the position of the Fermi level in SiC and band diagram, a conduction band offset of 0.4–0.5 eV was estimated between β -Ga 2 O 3 and 4H-SiC. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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