Erratum to: Design of a Nonlinear Model of a Pseudomorphic 0.15 µm рHEMT AlGaAs/InGaAs/GaAs Transistor.

Autor:	Tsunvaza, D., Ryzhuk, R. V., Vasil'evskii, I. S., Kargin, N. I., Klokov, V. A.
Předmět:	GALLIUM arsenide transistors MODULATION-doped field-effect transistors INDIUM gallium arsenide
Zdroj:	Russian Microelectronics; Dec2023, Vol. 52 Issue 6, p566-566, 1p
Abstrakt:	An Erratum to this paper has been published: https://doi.org/10.1134/S1063739723900043 [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu Full text from SpringerLink