| Autor: |
Green, David W., Hardikar, Shyam, Tadikonda, Ramakrishna, Sweet, Mark, Vershinin, Konstantin V., Narayanan, E. M. Sankara |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices; Jul2005, Vol. 52 Issue 7, p1672-1676, 5p |
| Abstrakt: |
Performance of multichannel lateral insulated gate bipolar transistors (MC-LIGBTs) fabricated in a cost-effective, fully implanted, CDMOS-compatible process in junction isolation technology is reported. Due to the presence of additional MOS cathode cells, the MC concept enables a reduction in the forward voltage drop. Furthermore, the MC concept is combined with the segmented N+P/P+ anode (SA-NPN) concept in an LJGBT structure. The SA-NPN anode concept reduces turnoff losses due to a reduction in injection of holes and from the collection of electrons by the narrow base-collector shorted NPN bipolar transistor formed at the anode. It is shown that combining the MC and the SA-NPN Anode concepts creates a device that exhibits both low on-state and turnoff losses and thus best placed for use in power IC applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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