| Autor: |
Chen, X. C., Li, L., Wang, M. Y., Ren, H., Liu, X. Q., Zeng, G., Yang, G. X. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2/7/2024, Vol. 135 Issue 5, p1-8, 8p |
| Abstrakt: |
Excess minority carriers create boron-related recombination centers that degrade the efficiency of the non-particle-irradiated silicon solar cells. However, the carrier-induced reactions among the radiation-induced defects are poorly understood for devices exposed to particle radiation. This study investigates the structure, electronic properties, formation and annihilation mechanisms, and diffusion dynamics of the carrier-induced defects in particle-irradiated boron-doped silicon using density-functional modeling and junction spectroscopy. By revisiting the ground-state structures of the boron-di-interstitial clusters (B I 2), we find that the calculated acceptor and donor levels of such defects agree well quantitatively with the carrier-induced deep-level transient spectroscopy (DLTS) hole emission signatures at 0.43 and 0.53 eV above the valence band edge (E v), respectively. We also find that the formation of B I 2 is thermally activated by an energy of 0.50 eV, which we explain theoretically by the reduction of the migration barrier of mono-interstitials to 0.53 eV in the presence of excess minority carriers. Moreover, we discover that the B I 2 are potentially mobile with a migration barrier of 1.18 eV, contrary to the present understanding. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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