Deactivation of Arsenic as an Acceptor by Ion Implantation and Reactivation by Low-Temperature Anneal.

Autor: Chandra, D., Schaake, H. F., Kinch, M. A., Dreiske, P. D., Teherani, T., Aqariden, F., Weirauch, D. F., Shih, H. D.
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Zdroj: Journal of Electronic Materials; Jun2005, Vol. 34 Issue 6, p864-867, 4p, 1 Diagram, 2 Charts, 5 Graphs
Abstrakt: Arsenic incorporated in HgCdTe epifilms at levels ranging from 6 x 1014 to 4 x 1016 cm-3, and activated completely as an acceptor, converts into a donor upon introduction of specific damage introduced by ion milling, ion implantation, or ECR. The results could be correlated to the formation of a complex between the arsenic and a product of the lattice damage process. If this product is assumed to be an atom, which could be an Hg interstitial, then a direct mass balance relationship dictates the formation of one Hg interstitial for each 49,000 atoms of Hg removed by the damage process. A very similar relationship is observed in the annihilation of metal vacancies pre-existing in the solid by damage introduced by ion milling. The deactivated arsenic, present as a donor, can be restored back to complete activation as an acceptor upon annealing for relatively short durations at 120°C. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
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