The interface effect on the lithiation of silicon/graphene composites: The first principles study.

Autor: Wang, M., Yang, C. X., Leng, X. Y., Chen, Y., Yang, S. B., Li, W., Hong, W., Xu, Y.
Předmět:
Zdroj: International Journal of Quantum Chemistry; 2/5/2024, Vol. 124 Issue 3, p1-8, 8p
Abstrakt: To reveal the interaction mechanism between lithium (Li) and silicon/graphene (Si/Gra) interface at the atomic scale, it was calculated that the energy band structure, density of states, charge transfer, radial distribution function and Li diffusion coefficient based on the first principles. The results indicated that the volume expansion of Si was effectively limited by the Si/Gra interface during Li insertion. There appeared the interface effect of Si/Gra on the combination of Li and Si atoms, according to the longer Li‐C (2.9 Å) and the larger electron cloud near the Li atom at the Si/Gra interface. The better diffusion channel for Li atoms was constructed at the Si/Gra interface, due to the lower diffusion energy barrier (0.42–0.44 eV) and higher diffusion coefficient (DLi = 0.784 × 10−4 cm2/s) for Li+ diffusion. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index