| Autor: |
Kogut, L., Komvopoulos, K. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/2005, Vol. 97 Issue 12, p124102, 5p, 1 Diagram, 6 Graphs |
| Abstrakt: |
Breakdown of oxide films at contact interfaces can result in significant current fluctuations with severe consequences on the long-term performance of electromechanical microdevices. Contrary to metal-oxide-semiconductor technology, the physical phenomena leading to breakdown of ultrathin native oxide films at silicon contact interfaces due to electromechanical stresses remain elusive. The objective of this study was to bridge this gap by performing experiments with special silicon microdevices subjected to different electrical actuation voltages and dwell contact times. Abrupt excursions in the current flow across the contact interface indicated the occurrence of breakdown events in the electromechanically stressed oxide films at the contact interface. The post-breakdown current–voltage response remained non-Ohmic, which is characteristic of the conduction paths produced during the breakdown events. The relatively long duration (a few seconds) of the electrical transient response is not indicative of contact bouncing, which is on the order of a few microseconds. The abrupt changes in the current density across the contact interface are associated with the formation of defects in the silicon oxide film. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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