| Autor: |
Bushnell, D. B., Tibbits, T. N. D., Barnham, K. W. J., Connolly, J. P., Mazzer, M., Ekins-Daukes, N. J., Roberts, J. S., Hill, G., Airey, R. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 6/15/2005, Vol. 97 Issue 12, p124908, 4p, 3 Charts, 4 Graphs |
| Abstrakt: |
The effect of increasing the number of quantum wells in a strain-compensated, multiquantum-well solar cell is investigated. It is found that as the well number is increased, dark current level close to the operating point rises linearly. Short-circuit current in the AM0 spectrum also rises linearly with the inclusion of more quantum wells. This allows the cell to maintain a constant open-circuit voltage irrespective of the number of wells grown. This is anticipated to have advantages when the cell is used as a replacement for the GaAs junction in the existing generation of tandem and triple-junction cells since current levels can be matched to the upper junction without detriment to the voltage performance. This result allows us to predict a tandem cell AM0 efficiency of 23.8% based on the 50-well cell. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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