| Autor: |
Lin, Wenxin, Huang, Jiangxia, Li, Shuxin, Blom, Paul W. M., Feng, Haonan, Li, Jiahao, Lin, Xiongfeng, Guo, Yulin, Liang, Wenlin, Wu, Longjia, Niu, Quan, Ma, Yuguang |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 1/28/2024, Vol. 135 Issue 4, p1-10, 10p |
| Abstrakt: |
Limited stability of blue quantum dot light-emitting diodes (QLEDs) under current stress impedes commercialization. Multi-layer structures of the state-of-the-art blue QLEDs pose significant difficulty in the fundamental understanding of degradation mechanisms. Here, by applying transient electroluminescence measurements, we disentangle charge transport in both pristine and degraded blue QLEDs. By varying thicknesses of the charge transport layers and the emissive layer, respectively, we show that the charge transport in pristine QLEDs is primarily dominated by holes. Furthermore, the degradation of QLEDs under electrical stress is governed by the decrease of hole transport in the emissive quantum dot layer due to the formation of hole traps. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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