| Autor: |
Zhang, Yongfeng, Liu, Shuainan, Xu, Ruiliang, Ruan, Shengping, Liu, Caixia, Ma, Yan, Li, Xin, Chen, Yu, Zhou, Jingran |
| Předmět: |
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| Zdroj: |
Nanotechnology; 4/15/2024, Vol. 35 Issue 16, p1-11, 11p |
| Abstrakt: |
β -Ga2O3 has been widely investigated for its stability and thermochemical properties. However, the preparation of β -Ga2O3 thin films requires complex growth techniques and high growth temperatures, and this has hindered the application of β -Ga2O3 thin films. In this study, β -Ga2O3 thin films with good crystalline quality were prepared using a green method, and an ultraviolet (UV) detector based on β -Ga2O3 with a photocurrent of 2.54 × 10–6 A and a dark current of 1.19 × 10–8 A has been developed. Two-dimensional materials have become premium materials for applications in optoelectronic devices due to their high conductivity. Here, we use the suitable energy band structure between Nb2C and Ga2O3 to create a high carrier migration barrier, which reduces the dark current of the device by an order of magnitude. In addition, the device exhibits solar-blind detection, high responsiveness (28 A W−1) and good stability. Thus, the Nb2C/ β -Ga2O3 heterojunction is expected to be one of the promising devices in the field of UV photoelectric detection. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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