| Autor: |
Yafei Wang, Hao Tong, Shengye Tao, Liangzheng Dong, Qianming Gong, Junsu Han, Hanpeng Wang, Mengyao Jia, Zhihao Wu, Daming Zhuang, Ming Zhao |
| Předmět: |
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| Zdroj: |
Solar RRL; Dec2023, Vol. 7 Issue 24, p1-7, 7p |
| Abstrakt: |
By substituting Zn1-xMgxO (ZMO) for the conventional CdS buffer layer, the CZTSSe solar cells with the efficiency of 11.2% are obtained herein, which can be attributed to the conduction band regulation in the heterojunction. An appropriate conduction band offset (CBO) value can effectively reduce nonradiative recombination loss of charge carriers at the interface, thereby improving the open-circuit voltage (Voc). Herein, ZMO buffer layer with the optical bandgap ranging from 3.34 to 3.90 eV is applied to enhance the CBO in the heterojunction from 0.14 to 0.72 eV. The ZMO-buffered solar cells exhibit higher Voc and shortcurrent density (Jsc) compared to CdS-buffered cells. The optimal efficiency of 11.2% is obtained in CZTSSe solar cell with the CBO of 0.27 eV, Jsc of 39.0 mA cm-2, fill factor of 69.6%, and Voc of 412 mV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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