| Autor: |
Rogachjva, O. I., Doroshenko, G. M., Nashchekina, O. M. |
| Předmět: |
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| Zdroj: |
Molecular Crystals & Liquid Crystals; 2023, Vol. 767, p60-69, 10p |
| Abstrakt: |
In this work, it was established that the room-temperature thickness (d = 16-207 nm) dependences of the Seebeck coefficient, Hall coefficient, and electrical conductivity in n-Bi2(Te0.9Se0.1)3 topological insulator thin films grown on glass substrates, in the thickness range of d = 16-85nm exhibit an undamped oscillatory behavior with a large amplitude and are well approximated by a harmonic function with a period ΔDd = (8.0 ± 0.5)nm. The anionic substitution leads to some changes in the quantum size effects manifestation. The experimental results are consistent with theoretical calculations of Dd based on the infinitely deep potential well model. A sustained character of the oscillations is attributed to topologically protected surface states. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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