| Autor: |
Polyakov, Alexander Y., Vasilev, Anton A., Kochkova, Anastasiia I., Shchemerov, Ivan V., Yakimov, Eugene B., Miakonkikh, Andrej V., Chernykh, Alexei V., Lagov, Petr B., Pavlov, Yrii S., Doroshkevich, A. S., Isaev, R. Sh., Romanov, Andrei A., Alexanyan, Luiza A., Matros, Nikolai, Azarov, Alexander, Kuznetsov, Andrej, Pearton, Stephen |
| Zdroj: |
Journal of Materials Chemistry C; 1/21/2024, Vol. 12 Issue 3, p1020-1029, 10p |
| Abstrakt: |
Double polymorph γ/β-Ga2O3 structures remain crystalline upon unprecedentedly high crystal disorder levels where other semiconductors lose their long-range symmetry and, eventually, become amorphous. However, it is unclear if this radiation tolerance translates to device-like operation, where much lower levels of damage degrade the performance. In this work, we fabricated conducting double polymorph γ/β-Ga2O3 structures using ion implantation and subsequent hydrogenation of the top γ-Ga2O3 layer, instead of conventional impurity doping which is limited by γ-Ga2O3 stability tradeoffs. While not a direct comparison, these structures exhibited much higher radiation tolerance compared to conventional Schottky diodes made of β-Ga2O3. Specifically, using 1.1 MeV proton irradiation at fluences of 1014–1015 cm−2, conventional β-Ga2O3 diodes became unfunctional, while double polymorph γ/β-Ga2O3 diodes remained operational. The centers supplying electrons in γ-Ga2O3 were characterized by prominent DX-like persistent photocapacitance. For samples implanted with Ga+ and Si+ to produce the β → γ transition, annealed at 600 °C and plasma hydrogenated, the net donor concentration was ∼1012 cm−3, with dominant electron traps near EC − 0.65–0.7 eV and photocapacitance and photocurrent spectra determined by deep acceptors with optical ionization thresholds 1.3 eV, 2 eV, 2.3 eV and 2.8 eV. Irradiation with 1 MeV protons increased the net donor density of these conducting γ/β-Ga2O3 structures, with carrier creation rates of (1.5–4.4) × 10−2 cm−2, in sharp contrast to the carrier removal rates of 150–200 cm−1 under identical conditions in the original β-Ga2O3 films. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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