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Zdroj: |
Medical Imaging Week; 2024, p38-38, 1p |
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Researchers at Vellore Institute of Technology in Tamil Nadu, India have published a study on nanostructures and their potential applications in artificial synaptic devices. The study found that a two-terminal device based on copper oxide nanostructures and indium tin oxide electrodes exhibited resistive switching behavior. The presence of oxygen vacancies in the copper oxide and exposure to atmospheric oxygen were identified as key factors in the observed switching behavior. The researchers concluded that copper oxide-based devices show promise for neuromorphic applications. [Extracted from the article] |
Databáze: |
Complementary Index |
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