| Autor: |
Ravindra, N. M., Mehta, Vishal R., Shet, Sudhakar |
| Předmět: |
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| Zdroj: |
JOM: The Journal of The Minerals, Metals & Materials Society (TMS); Jun2005, Vol. 57 Issue 6, p16-20, 5p, 3 Diagrams, 2 Charts, 1 Graph |
| Abstrakt: |
This year marks the 40th anniversary of the invention of the first beam-lead device by Lepselter et al. Lepselter and coworkers proposed a method of fabricating a new semiconductor device structure and its application to high-frequency silicon switching transistors and ultra-high-speed integrated circuits. Beam-lead technology, also known as air-bridge technology, has established itself for its unsurpassed reliability in high-frequency silicon switching transistors and ultra-high-speed integrated circuits for telecommunications and missile systems. The beam-lead device became the first example of a commercial microelectromechanical structure (MEMS). Since its inception, MEMS has taken advantage of the evolving silicon technology, resulting in today's nanoelectromechanical structure and nanooptomechanical structure. In this paper, an overview of recent developments of silicon nanoelectronics is presented. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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