| Autor: |
Anikina, A. A., Danilenko, G. O., Lamkin, I. A., Patokov, N. O., Tarasov, S. A., Pavlova, M. D. |
| Zdroj: |
Inorganic Materials: Applied Research; Apr2023, Vol. 14 Issue 2, p587-590, 4p |
| Abstrakt: |
Experimental samples of single-crystal silicon with hole conductivity doped with boron (KDB-12) and with electronic conductivity doped with phosphorus (KEF-4.5) were studied using the C–V method of postoperative control. On the original KEF-4.5 and KDB-12 wafers, a dielectric layer of silicon dioxide SiO2 was grown. Next, the near-surface layer was doped with phosphorus or boron by ion implantation with the type of conductivity corresponding to the substrate. Postoperative control of the dose of impurity atoms embedded by ion implantation was carried out according to capacitance–voltage characteristics. The impurity distribution profiles for the same sample obtained at different points, as well as for different samples with the same implanted dose, differed slightly. The calculation of the dose of implanted ions and the relative error showed a high accuracy of control of the ion implantation process by measuring the capacitance–voltage characteristics. The relative measurement error when compared with the given dose did not exceed 10%. An error greater than 5% was observed for samples with an implanted ion dose close to the limiting dose detected by this method. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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