| Autor: |
Chou, Bo-Jhih, Chung, Yun-Yan, Yun, Wei-Sheng, Hsu, Chen-Feng, Li, Ming-Yang, Su, Sheng-Kai, Liew, San-Lin, Hou, Vincent Duen-Huei, Chen, Chien-Wei, Kei, Chi-Chung, Shen, Yun-Yang, Chang, Wen-Hao, Lee, T Y, Cheng, Chao-Ching, Radu, Iuliana P, Chien, Chao-Hsin |
| Předmět: |
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| Zdroj: |
Nanotechnology; 3/18/2024, Vol. 35 Issue 12, p1-7, 7p |
| Abstrakt: |
In this article, a 0.7 nm thick monolayer MoS2 nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high- κ metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410 μ A μ m−1 with a large on/off ratio of 6 × 108 at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩ μ m in monolayer MoS2 NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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