| Autor: |
Supraja, P. Sai, Bhandhavya, N., Srinivas, P. Bala, Singh, Mahesh K. |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2024, Vol. 3000 Issue 1, p1-6, 6p |
| Abstrakt: |
A thin-metallic Very-large-scale integration (VLSI) executes the low-frequency noise (LFN) measurements of three different geometrics. These three different geometrics were taken out under stressing current densities at different temperatures to explore the weakness of LFN on the geometric form of VLSI interconnect. The relation between the VLSI reliability and the features of noise source in arithmetic based thin film is discussed in this paper. When we were applying the techniques to the noise implementations in sleuthing existing faults/ defects in the films, in this we can see that topic is reported the time to failure of VLSI interconnections are presented and also determining electro-migration activation energy. This paper delves into the era of VLSI technology and examines the impact of low-frequency noise (LFN) in solid-state systems. It highlights that the degradation of signal-to-noise ratio (SNR) can be a source of disturbance. Despite this, it is noted that reducing the size of integrated circuits leads to an improvement in SNR. The paper analyzes the behavior of these measurements under specific conditions. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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