| Autor: |
Agarwal, Shubhanshu, Weideman, Kyle, Rokke, David, Vincent, Kiruba Catherine, Zemlyanov, Dmitry, Agrawal, Rakesh |
| Zdroj: |
Journal of Materials Chemistry C; 1/7/2024, Vol. 12 Issue 1, p325-336, 12p |
| Abstrakt: |
AgInSe2 is a promising direct bandgap thin-film material with a rare n-type conductivity. Similar to thin film photovoltaic materials such as Cu(In,Ga)Se2 (CIGSe), which have achieved efficiencies as high as ∼23%, AgInSe2 also crystallizes in a chalcopyrite phase while also being more tolerant to antisite defects due to higher defect formation energies resulting from more significant variations in cation sizes. AgInSe2 has a suitable bandgap of 1.24 eV, which lies in the high-efficiency region of the detailed balance limit. In this work, we have utilized a dimethyl formamide–thiourea–chloride-based solution-processed route to deposit a thin film of AgInS2 which is converted into AgInSe2 after a heat-treatment step in a selenium environment. We observed that AgInSe2 optoelectronic properties depend on the Ag/In ratio and the selenium heat-treatment conditions. Significant improvements in photoluminescence yield and lifetime are observed for Ag-poor films in selenium-rich conditions. X-ray photoelectron spectroscopy (XPS) measurements confirm a higher amount of selenium on the surface of films with improved optoelectronic properties. Furthermore, a high minority carrier lifetime of 9.2 ns and a photoluminescence quantum yield (PLQY) of 0.013% are obtained without any passivating layer, which improved to 0.03% after CdS passivation. Hall effect measurements confirm that AgInSe2 has n-type conductivity with a moderate carrier concentration (10−14 cm−3), more suitable for a p–i–n architecture. XPS has further confirmed the moderate n-type conductivity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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