| Autor: |
Klym, H., Kushnir, O., Karbovnyk, I. |
| Předmět: |
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| Zdroj: |
Applied Nanoscience; Dec2023, Vol. 13 Issue 12, p7445-7454, 10p |
| Abstrakt: |
Surface crystallization processes in the 80GeSe2–20Ga2Se3 glasses thermally annealed at 380 °C for 25 and 80 h were studied by both experimental methods and statistical analysis of images using Python scripts. It is shown that GeSe2 phase is formed as a result of annealing unevenly on glass surface in the form of thread-like crystallites with a length of 1–3 μm. The obtained dependences of number crystallites on their geometric parameters indicate a significant increase in their size (area, length and width) with an increase in the duration of annealing up to 80 h. At the same time, the crystallite growth orientation does not change and is 50°, 90° and 130°. Optimal conditions for crystallization processes can be selected based on the obtained results to prepare stable 80GeSe2–20Ga2Se3 glasses with predetermined optical properties. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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