| Autor: |
Kudryavtsev, K. E., Andreev, B. A., Lobanov, D. N., Kalinnikov, M. A., Yablonskiy, A. N., Yunin, P. A., Novikov, A. V., Krasilnik, Z. F. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 12/7/2023, Vol. 134 Issue 21, p1-8, 8p |
| Abstrakt: |
Interband recombination in bulk indium-rich InGaN is studied via both spontaneous and stimulated emissions. Based on the low-temperature luminescence and absorption data, the magnitude of the edge tails in conduction and valence bands is determined, and the non-thermal energy distribution of excess holes localized in the fluctuating band potential is revealed. We show that the combination of carrier localization effects and Auger-determined interband rates fully accounts for the experimentally observed stimulated emission thresholds and gain values (∼20–30 kW/cm2 and >100 cm−1, respectively) at low temperatures (T < 100 K). It is suggested that exploiting structural disorder to keep injected holes below the mobility edge, thus suppressing defect-related recombination, is a prerequisite for high-temperature infrared lasing from degenerate InGaN with relatively temperature-stable threshold intensities of some 100 kW/cm2. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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