High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asymmetric Heterostructures with a Broadened Waveguide and Reduced Vertical Divergence.

Autor: Slipchenko, S. O., Podoskin, A. A., Nikolaev, D. N., Shamakhov, V. V., Shashkin, I. S., Kondratov, M. I., Gordeev, I. N., Grishin, A. E., Kazakova, A. E., Gavrina, P. S., Bakhvalov, K. V., Kop'ev, P. S., Pikhtin, N. A.
Zdroj: Bulletin of the Lebedev Physics Institute; 2023 Suppl9, Vol. 50, pS976-S983, 8p
Abstrakt: The effect of the active region design on the vertical far-field divergence is studied for high-power laser diodes based on asymmetric heterostructures with a 4-μm thick waveguide and active region designs based on single (SQW) and double (DQW) InGaAs quantum wells. It is shown that the number of quantum wells has a significant effect on the divergence determined by the angle with the 95% power content (Θ95%). For asymmetric heterostructures with an SQW active region, the beam divergence at the half-maximum level (FWHM) is 12.9°. It is experimentally shown that the transition from the SQW to the DQW design of the active region leads to an increase in the Θ95% value from 23.2° to 41.8°. For both types of structures, the internal optical loss and internal quantum efficiency are 0.27 cm‒1 and 99%, respectively. On the basis of asymmetric heterostructures with an active SQW region, we demonstrate high-power laser diodes emitting a CW power of 9 W at a temperature and pump current of 25°C/10 A and 55°C/11.4 A. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index
Externí odkaz: