| Autor: |
Kurgan, Natalia, Kordyuk, Alexander, Karbivskyy, Volodymyr, Karbivska, Love, Romansky, Anastas, Shvachko, Nazar |
| Předmět: |
|
| Zdroj: |
Applied Nanoscience; Nov2023, Vol. 13 Issue 11, p7321-7326, 6p |
| Abstrakt: |
Nickel nanostructures on the surface of Si (111) 7 × 7 at different deposition intervals were obtained by thermal deposition under ultrahigh vacuum conditions without cooling the sample and injecting inert gases into the volume. It is shown that at the initial stage of deposition within 1 s, nickel forms structures of the "ring-cluster" type Ni-Si with a height of about 0.11 nm and a structural type of 1 × 1. With increasing deposition time, the formation of a thin film by the Volmer–Weber mechanism was observed. Thermal loading on Ni-Si quantum dots 1 × 1 at 980 °C leads to the formation of NiSi2 clusters with a characteristic spread in size of ~ 1.0 nm and their localization area along the twinning boundary of the crystal. Ni-Si quantum dots show resonant tunneling through discrete levels. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
Full text from SpringerLink