Correlation between morphology and ambipolar transport in organic field-effect transistors.

Autor:	Singh, Th. B., Günes, S., Marjanovic, N., Sariciftci, N. S., Menon, R.
Předmět:	FIELD-effect transistors TRANSISTORS ELECTRONICS SEMICONDUCTORS THIN films SOLID state electronics MICROSTRUCTURE PHYSICS
Zdroj:	Journal of Applied Physics; 6/1/2005, Vol. 97 Issue 11, p114508, 5p, 2 Color Photographs, 2 Diagrams, 3 Graphs
Abstrakt:	Attaining ambipolar charge transport in organic field-effect transistors (OFET) is highly desirable from both fundamental understanding and application points of view. We present the results of an approach to obtain ambipolar OFET with an active layer of organic semiconductor blends using semiconducting polymers in composite with fullerene derivatives. Clear features of forming the superposition of both hole and electron-enhanced channels for an applied gate field are observed. The present studies suggest a strong correlation of thin-film nanomorphology and ambipolar transport in field-effect devices. [ABSTRACT FROM AUTHOR]
Databáze:	Complementary Index
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