Effect of Transition Metal Dichalcogenide Based Confinement Layers on the Performance of Phase‐Change Heterostructure Memory.

Autor: Kim, Tae Ho, Park, Seung Woo, Lee, Ho Jin, Kim, Dong Hyun, Choi, Jun Young, Kim, Tae Geun
Zdroj: Small; 11/28/2023, Vol. 19 Issue 48, p1-9, 9p
Databáze: Complementary Index
Externí odkaz: