| Autor: |
Reza, Md. Shamim, Dey, Tuhin, Arbogast, Augustus W., Muhowski, Aaron J., Holtz, Mark W., Stephenson, Chad A., Bank, Seth R., Wasserman, Daniel, Wistey, Mark A. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 11/14/2023, Vol. 134 Issue 18, p1-7, 7p |
| Abstrakt: |
Direct bandgap group IV materials could provide intimate integration of lasers, amplifiers, and compact modulators within complementary metal–oxide–semiconductor for smaller, active silicon photonics. Dilute germanium carbides (GeC) with ∼1 at. % C offer a direct bandgap and strong optical emission, but energetic carbon sources such as plasmas and e-beam evaporation produce defective materials. In this work, we used CBr4 as a low-damage source of carbon in molecular beam epitaxy of tin-free GeC, with smooth surfaces and narrow x-ray diffraction peaks. Raman spectroscopy showed substitutional incorporation of C and no detectable sp2 bonding from amorphous or graphitic carbon, even without surfactants. Photoluminescence shows strong emission compared with Ge. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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