| Autor: |
Cai, Yuncong, Feng, Zhaoqing, Wang, Zhengxing, Song, Xiufeng, Hu, Zhuangzhuang, Tian, Xusheng, Zhang, Chunfu, Liu, Zhihong, Feng, Qian, Zhou, Hong, Zhang, Jincheng, Hao, Yue |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/6/2023, Vol. 123 Issue 19, p1-6, 6p |
| Abstrakt: |
In this work, we demonstrated the enhancement mode (E-mode) β-Ga2O3 metal–oxide–semiconductor field-effect transistor (MOSFET) by introducing a hybrid floating gate (HFG) structure. This E-mode Ga2O3 MOSFET featured the highest VTH of 9.03 V and the highest maximum current ID of 70.0 mA/mm among the reported lateral normally off β-Ga2O3 MOSFETs. Meanwhile, a breakdown voltage of 834 V, a specific on-resistance RON,sp of 19.3 mΩ·cm2, and a sub-threshold swing SS of 87 mV/dec were achieved simultaneously. In addition, VTH shifted by only 9.9% after applying a gate stress of 25 V for 105 s. These findings provide a promising path for the development of enhancement-mode Ga2O3 power devices by incorporating a charge-storage structure. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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