| Autor: |
Karim, Anwarul, Song, Yiwen, Shoemaker, Daniel C., Jeon, Dae-Woo, Park, Ji-Hyeon, Mun, Jae Kyoung, Lee, Hun Ki, Choi, Sukwon |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 11/6/2023, Vol. 123 Issue 19, p1-6, 6p |
| Abstrakt: |
The ultra-wide bandgap (UWBG) energy (∼5.4 eV) of α-phase Ga2O3 offers the potential to achieve higher power switching performance and efficiency than today's power electronic devices. However, a major challenge to the development of the α-Ga2O3 power electronics is overheating, which can degrade the device performance and cause reliability issues. In this study, thermal characterization of an α-Ga2O3 MOSFET was performed using micro-Raman thermometry to understand the device self-heating behavior. The α-Ga2O3 MOSFET exhibits a channel temperature rise that is more than two times higher than that of a GaN high electron mobility transistor (HEMT). This is mainly because of the low thermal conductivity of α-Ga2O3 (11.9 ± 1.0 W/mK at room temperature), which was determined via laser-based pump-probe experiments. A hypothetical device structure was constructed via simulation that transfer-bonds the α-Ga2O3 epitaxial structure over a high thermal conductivity substrate. Modeling results suggest that the device thermal resistance can be reduced to a level comparable to or even better than those of today's GaN HEMTs using this strategy combined with thinning of the α-Ga2O3 buffer layer. The outcomes of this work suggest that device-level thermal management is essential to the successful deployment of UWBG α-Ga2O3 devices. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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