| Autor: |
Zhu, Jiyuan, Hu, Shen, Chen, Bojia, Zhang, Yu, Wei, Shice, Guo, Xiangyu, Zou, Xingli, Lu, Xionggang, Sun, Qingqing, Zhang, David W., Ji, Li |
| Předmět: |
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| Zdroj: |
Journal of Chemical Physics; 11/7/2023, Vol. 159 Issue 17, p1-10, 10p |
| Abstrakt: |
The relocation of peripheral transistors from the front-end-of-line (FEOL) to the back-end-of-line (BEOL) in fabrication processes is of significant interest, as it allows for the introduction of novel functionality in the BEOL while providing additional die area in the FEOL. Oxide semiconductor-based transistors serve as attractive candidates for BEOL. Within these categories, In2O3 material is particularly notable; nonetheless, the excessive intrinsic carrier concentration poses a limitation on its broader applicability. Herein, the deposition of Hf-doped In2O3 (IHO) films via atomic layer deposition for the first time demonstrates an effective method for tuning the intrinsic carrier concentration, where the doping concentration plays a critical role in determine the properties of IHO films and all-oxide structure transistors with Au-free process. The all-oxide transistors with In2O3: HfO2 ratio of 10:1 exhibited optimal electrical properties, including high on-current with 249 µA, field-effect mobility of 13.4 cm2 V−1 s−1, and on/off ratio exceeding 106, and also achieved excellent stability under long time positive bias stress and negative bias stress. These findings suggest that this study not only introduces a straightforward and efficient approach to improve the properties of In2O3 material and transistors, but as well paves the way for development of all-oxide transistors and their integration into BEOL technology. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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