| Autor: |
Kovalyuk, Z. D., Katerynchuk, V. N., Politanska, O. A., Sydor, O. N., Khomyak, V. V. |
| Předmět: |
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| Zdroj: |
Technical Physics Letters; May2005, Vol. 31 Issue 5, p359-360, 2p |
| Abstrakt: |
We have studied the influence of γ radiation (60Co source) on the photoelectric parameters of InSe diodes based on the direct optical contact p-InSe/n-InSe. The penetrating radiation produces defects of the acceptor type in the base material, but does not lead to any significant degradation of the energy barrier. The irradiation even improves the parameters of InSe photodiodes, which is manifested by an increase in both the open-circuit voltage and the short-circuit current. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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