| Autor: |
Yao, Yongzhao, Tsusaka, Yoshiyuki, Hirano, Keiichi, Sasaki, Kohei, Kuramata, Akito, Sugawara, Yoshihiro, Ishikawa, Yukari |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 10/21/2023, Vol. 134 Issue 15, p1-10, 10p |
| Abstrakt: |
Synchrotron radiation x-ray topography (XRT) in a transmission configuration based on the Borrmann effect (BE) was carried out to observe characteristic dislocation structures and three-dimensional distribution and propagation of dislocations in β-Ga2O3 grown via the edge-defined film-fed growth (EFG) method. Substrates with a range of surface orientations of (001), (010), and (2 ¯ 01) , cut perpendicular or parallel to the ⟨010⟩ growth direction of the EFG, were observed to understand the whole picture of dislocations distributed in the bulk crystals. Using the (001)-oriented substrate, we found characteristic dislocation structures such as dislocation helices, damage-related (001)-plane dislocation networks, and tangled dislocation complexes, which exist universally in EFG crystals but have rarely been reported before. A careful measurement of the dislocation length in BE-XRT images taken with different g-vectors allows us to determine the crystal plane on which a dislocation lies. The BE-XRTs taken from the (010)-oriented and (2 ¯ 01) -oriented substrates suggested that the dislocations propagating along the [010] growth direction were dominant. Most of these b-axis threading dislocations had a Burgers vector of [010] or [001], and they tended to align in the (100) plane. The BE-XRT observations in this study provide valuable knowledge for understanding the structure and character of dislocations in β-Ga2O3. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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