| Autor: |
Wang, Ruihu, Sun, Leiyi, Wang, Hui, Peng, Zhuo, Yuan, Yujie, Xing, Yupeng, Yao, Liyong, Bi, Jinlian, Li, Wei |
| Předmět: |
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| Zdroj: |
Journal of Electronic Materials; Nov2023, Vol. 52 Issue 11, p7708-7717, 10p |
| Abstrakt: |
Copper antimony selenium (CuSbSe2) is considered a promising candidate for manufacturing flexible thin film solar cells. However, inappropriate band offset deteriorates the properties of CuSbSe2 solar cell devices. In this work, the effects of Cd1−xZnxS and ZnOyS1−y buffer layers on the performance of CuSbSe2 solar cells were studied with SCAPS simulation. The preliminary structure was designed, and the influence of Zn/(Zn + Cd) ratio, O/(O + S) ratio, thickness, and donor density of Cd1−xZnxS and ZnOyS1−y buffer layers on the performance of the solar cell was then investigated. The conduction band offset (CBO) of the interface between buffer layer and absorber layer was optimized. Efficiency values of 7.81% and 10.26% were obtained for the CuSbSe2 devices with Zn/(Zn + Cd) = 0.5 and O/(O + S) = 0.6, and the thickness of Cd1−xZnxS and ZnOyS1−y buffer layers was 20 nm and 30 nm, respectively. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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