| Autor: |
Gosset, L.G., Ganem, J.J. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 4/1/1999, Vol. 85 Issue 7, p3661, 5p, 1 Chart, 4 Graphs |
| Abstrakt: |
Studies the modification by postoxidation nitrogen oxide (NO) treatments of silicon/silicon dioxide interface. Application of nuclear reaction analysis in the study; Incorporation of NO molecules at the interface; Accomodation of the structural mismatch between the silicon lattice and the silicon dioxide layer; Results of the study. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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