| Autor: |
Herrera Diez, L., Chiba, D., Gilbert, D. A., Granville, S., Leistner, K. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 9/25/2023, Vol. 123 Issue 13, p1-3, 3p |
| Abstrakt: |
10.1063/5.0128531 9 H. Ekawa, J. Shen, K. Toyoki, R. Nakatani, and Y. Shiratsuchi, " Gate-induced switching of perpendicular exchange bias with very low coercivity in Pt/Co/Ir/Cr2O3/Pt epitaxial film", Appl. Phys. While W and Ta heavily degrade the magnetic response, Pt can be used to move from gate-induced effects within the PMA regime in CoFeB/MgO to a nonvolatile and reversible gate-induced spin-reorientation transition in CoFeB/Pt/MgO. Lu I et al. i [12] show that in IrMn/W/CoFeB/MgO/CoFeB based MTJs the exchange bias field allows for field-free SOT switching while the VCMA effect combined with Joule heating can significantly reduce the coercivity. A large portion of the ongoing research in spintronics is focused on advancing magnetic memory designs to not only provide improved capabilities but also operate with minimal power consumption. [Extracted from the article] |
| Databáze: |
Complementary Index |
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