| Autor: |
Koval'chuk, N. S., Lastovskii, S. B., Odzhaev, V. B., Petlitskii, A. N., Prosolovich, V. S., Shestovsky, D. V., Yavid, V. Yu., Yankovskii, Yu. N. |
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| Zdroj: |
Russian Microelectronics; Aug2023, Vol. 52 Issue 4, p276-282, 7p |
| Abstrakt: |
The results of studies of electrophysical parameters of pin-silicon-based photodiodes, depending on their operating modes (external bias and temperature), manufactured on single-crystal silicon wafers of p-type conduction orientation (100) with ρ = 1000 ohm cm, are presented. The p+-type region (isotype junction) is created by the implantation of boron ions; the n+-type region, by the diffusion of phosphorus from the gas phase. It is established that on the voltage-current characteristics under reverse bias, three regions of dark current variation depending on the applied voltage can be distinguished, sublinear, superlinear, and linear, caused by various mechanisms of the generation-recombination processes in the depletion region of the pn‑junction. A noticeable dependence of the barrier capacitance value (at a frequency of 1 kHz) and the size of the depletion region on temperature is observed only when the applied reverse voltages do not exceed the contact potential difference (V ≤ 1 V). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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