| Autor: |
Jeon, Jiyeon, Park, Suho, Kim, Yeongho, Nguyen, Phuc Dinh, Chun, Byong Sun, Lee, Sang Jun |
| Zdroj: |
Journal of Materials Chemistry C; 10/7/2023, Vol. 11 Issue 37, p12698-12706, 9p |
| Abstrakt: |
A miniaturized extended short-wavelength infrared (SWIR) InGaAs microspectrometer is fabricated and characterized. An In0.83Ga0.17As detector with a cutoff wavelength of 2.6 μm is successfully grown on metamorphic InAsP layers with a low surface roughness of 2.7 nm and a large strain relaxation of 96%. A wedge-shaped Si/SiO2 Fabry–Perot (F–P) linear variable optical filter (LVOF), fabricated using a specially designed deposition process, shows that the transmission peaks of the F–P fundamental mode linearly increase with increasing SiO2 cavity thickness. Similarly, a 256 × 1 InGaAs linear array detector integrated with Si/SiO2 F–P LVOF detects the transmission spectra in the 1.6–2.6 μm range that linearly shifts towards longer wavelengths with a thicker cavity thickness. The dark current of the microspectrometer is dominated by the generation-recombination current at temperatures in the range of 180–300 K, caused by Shockley–Read–Hall recombination through mid-gap states in the depletion region. At 300 K, the microspectrometer exhibits a responsivity of 0.34 AW−1 and a noise voltage of 76 nV Hz−1/2, resulting in a specific detectivity of 6.3 × 108 cm Hz1/2 W−1. We expect these single-chip SWIR micro spectrometers to be well-suited for applications in portable, wearable, or unmanned systems because of their compactness, robustness, and high spectral selectivity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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