Solvent-assisted sulfur vacancy engineering method in MoS2 for a neuromorphic synaptic memristor.

Autor: Jiyeon Kim, Changik Im, Chan Lee, Jinwoo Hwang, Hyoik Jang, Jae Hak Lee, Minho Jin, Haeyeon Lee, Junyoung Kim, Junho Sung, Youn Sang Kim, Eunho Lee
Zdroj: Nanoscale Horizons; Oct2023, Vol. 8 Issue 10, p1417-1427, 11p
Databáze: Complementary Index