| Autor: |
Jia, Haolin, zhou, Boyi, Wang, Tao, Wu, Yanfu, Yang, Lina, Ding, Zengqian, Li, Shuming, Cai, Xiao, Xiong, Kanglin, Feng, Jiagui |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2023, Vol. 41 Issue 5, p1-6, 6p |
| Abstrakt: |
Polycrystalline α-tantalum (110) films deposited on the c-plane sapphire substrate by sputtering are used in superconducting qubits nowadays. However, these films always occasionally form other structures, such as α-tantalum (111) grains and β-tantalum grains. To improve the film quality, we investigate the growth of α-tantalum (110) films on the a-plane sapphire substrate under varying conditions by molecular beam epitaxy technology. The optimized α-tantalum (110) film is a single crystal, with a smooth surface and atomically flat metal–substrate interface. The film with thickness of 30 nm shows a Tc of 4.12 K and a high residual resistance ratio of 9.53. The quarter wavelength coplanar waveguide resonators fabricated with the 150 nm optimized α-tantalum (110) film exhibit intrinsic quality factor of over one million under single photon excitation at millikelvin temperature. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
