| Autor: |
de Salvo, G. C., Esker, P. M., Flint, L. A., Ostop, J. A., Stewart, E. J., Knight, T. J., Petrosky, K. J., van Campen, S. D., Clarke, R. C., Bates, G. M. |
| Předmět: |
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| Zdroj: |
International Journal of High Speed Electronics & Systems; Sep2004, Vol. 14 Issue 3, p282-284, 3p |
| Abstrakt: |
The article focuses on static induction transistors (SIT). There are many commercial applications which require high RF CW power in the kilowatt to megawatt range. To date, these high RF power requirements can only be accomplished by incorporating traveling wave tubes or inductive output tubes. However, recent advances in the output power capability of SiC power devices for radar systems now suggest that high power SiC SIT can be used to develop a 10 kilowatt solid state RF power amplifier. From analysis of existing high power RF amplifiers, development of a transistor cell that can produce 10 Watt CW output power would provide the necessary building block for assembly of a 10 kilowatt power amplifier. |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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